DPG120C300QB
ns
3.5
A
TVJ
=°C25
reverse recovery time
A
9
35
65
ns
IRM
max. reverse recovery current
IF
=A;60
VR
=V200
T=125°CVJ
-diF/dt
=A/μs200
trr
TVJ
=°C25
T=125°CVJ
V = VR
300
Symbol Definition
Ratings
typ. max.
IR
V
IFAV
A
VF
1.40
RthJC
0.55 K/W
min.
60
VRSM
V
1
T = 25°CVJ
T = °CVJ
150
mA
0.35
V = VR
300
T = 25°CVJ
I = AF
60
V
T = °CC
130
Ptot
275
W
T = 25°CC
RthCH
K/W
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
1.72
T = 25°CVJ
VF0
V
0.69
T = °CVJ
175
rF
5.8
m?
V
1.10
T = °CVJ
125
I = AF
60
V
1.45
I = AF
120
I = AF
120
threshold voltage
slope resistance
for power loss calculation only
μA
VRRM
V
300
max. repetitive reverse blocking voltage
T = 25°CVJ
CJ
80
junction capacitance
V = VR
150 T = 25°Cf = 1 MHz
VJ
pF
IFSM
t = 10 ms; (50 Hz), sine; T = 45°CV = 0 VR
VJ
max. forward surge current
T = °CVJ
175
450
A
rectangular 0.5d =
average forward current
thermal resistance junction to case
thermal resistance case to heatsink
Fast Diode
300
0.25
IXYS reserves the right to change limits, conditions and dimensions.
20131125a
Data according to IEC 60747and per semiconductor unless otherwise specified
? 2013 IXYS all rights reserved